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A New Approach to Circuit Breaker Design Using Silicon Carbide Switches - Nov 21
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Power Electronics Europe News
FETs set standard with improved thermal performance

They are based on the company’s XS-PairFET package and low voltage technology. They are optimised for enhanced driving and switching performance.

AOE6932 improves gate driving performance and reduces power loss at relatively low output current, claims the company, while the AOE6936 features a 20V gate voltage tolerance with much smaller parasitic capacitances.

Both devices offer the same 8mΩ (max) Rds(ON) at 4.5V gate driving voltage on the high side, but different Rds(ON) values for the low side FET.

AOE6932 is designed with a 1.8mΩ (max) at 4.5Vgs low side FET, and AOE6936 is designed with a 3mΩ (max) low side FET. According to the company, these configurations optimise each FET to achieve the best efficiency and address specific application requirements, such as the I/O voltage headroom, and current per phase for the V core power supply in notebook and desktop PCs, and high-end VGA designs.

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