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A New Approach to Circuit Breaker Design Using Silicon Carbide Switches - Nov 21
Mechanical circuit breakers can be low cost with minimal losses, but they operate slowly and wear out. Solid state versions overcome the problems and are becoming increasing viable as replacements at...
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Four high voltage MOSFETs are efficient for LED lighting
Available with 800 and 900V ratings, the n-channel devices have typical on resistance (RDS(ON)) ratings down to just 1.9Ω. Target applications are flyback converters in LED lighting, supplementary power supplies and other circuits requiring current switching below 5A.

They are based on Toshiba’s π-MOS VIII (Pi-MOS-8) eighth generation planar semiconductor process, which combines high cell integration with optimised cell design, says the company. This technology supports reduced gate charge and capacitance without losing the benefits of low RDS(ON).  

The 2.5A TK3A90E and 4.5A TK5A90E feature VDSS ratings of 900V and have respective typical RDS(ON) ratings of 3.7 and 2.5Ω. Both the 4.0A TK4A80E and 5.0A TK5A80E devices offer VDSS ratings of 800V with respective typical RDS(ON) ratings of 2.8 and 1.9Ω.

 

Low maximum leakage current is only 10μA (VDS = 60V) and gate threshold voltage range is 2.5 to 4.0V (when VDS is 10V and drain current is 0.4mA). All four are supplied in a standard TO-220SIS form factor.

Visit Toshiba Electronics Europe at PCIM 2016: , Hall 9 Booth 301

 

 




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