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Complementary MOSFETs boost buck converter density
To increase the power density of DC/DC converters, the DMC1028UFDB complementary MOSFET pair integrates an N-channel MOSFET and a P-channel MOSFET.
Housed in a single DFN2020 package, the design is customised for PoL converters that step down from 3.3 to 1V for core voltage supply to ASICs. Target applications are Ethernet network controllers and processors in equipment such as routers, network interface controllers, switches, digital subscriber line (DSL) adapters, servers, and set-top boxes, says Diodes.
Buck converters implemented using a separate PWM controller and external MOSFETs provide for distributed heat dissipation from the switching elements. The performance parameters of the MOSFETs have been optimised to maximise efficiency while driving loads up to 3A, says the company. The low 19mΩ Rds(on) at Vgs of 3.3V for the low-side N‑channel MOSFET is mostly on for two-thirds of the switching cycle. A low gate charge (Qg) of 5nC at Vgs of 3.3V for the P‑channel MOSFET minimises switching losses.
The DMC1028UFDB uses a P‑channel MOSFET to implement the high-side switching element. This simplifies the design and reduces the component count compared to an N-channel MOSFET that would require a charge pump. Overall power density is doubled by combining the P-channel and N-channel devices, as a complementary MOSFET pair, in a single DFN2020 package relative to individual MOSFETs in the same footprint package.


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