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A New Approach to Circuit Breaker Design Using Silicon Carbide Switches - Nov 21
Mechanical circuit breakers can be low cost with minimal losses, but they operate slowly and wear out. Solid state versions overcome the problems and are becoming increasing viable as replacements at...
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Power Electronics Europe News
 
Mini FETs use 40% less space
The three MOSFETs are in the tiny DFN0606 package and are 20V and 30V rated N-channel transistors and a 30V rated P-channel part. The footprint is just 0.6 x 0.6mm, allowing each device to take 40% less board space than the commonly used DFN1006 (aka SOT883) packaged MOSFETs, says the company. This reduction makes them suitable for next-generation wearable tech, tablets and smartphones. The DMN2990UFZ (20V nMOS), the DMN31D5UFZ (30V nMOS) and DMP32D9UFZ (30V pMOS) have been designed to minimise on-state resistance without effecting switching performance. A typical threshold voltage of less than 1V means a lower ‘turn-on’, suitable for single-cell operation. These MOSFETs are suited for high-efficiency power-management duties and as general-purpose interfacing and simple analogue switches. Circuit power density is also boosted with DFN0606 parts achieving a power dissipation of 300mW.

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