Features
Power_electronics Features

Powering the future of Autonomous driving - issue 4/2019
Analog Devices announced mid July a collaboration with First Sensor AG to develop products aimed at speeding the launch of autonomous sensing technology serving unmanned automotive, aerial and...
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Linear voltage regulators operate at automotive temperatures
Designed for high reliability, high temperature applications, the CMT-Antares is Cissoid's latest regulator.
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Power Modules Features
 
Direct Cooled Low Inductive SiC Mold Module - issue 3/2019 June, 26 2019
To make use of the superior properties of wide bandgap (WBG) semiconductors, power modules are needed with optimised parasitic electromagnetic properties, a high temperature capability and the possibility for a high degree of integration...
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DC Bus switching performance as determined by commutation loop parasitics and switching dynamics - issue 3/2018 May, 17 2018
In this article a 250KW all-SiC inverter evaluation kit designed around low-inductance, high speed power modules is used to demonstrate the DC Bus switching performance resulting from the interaction among commutation loop parasitics and the switching dynamics..
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Tailoring Circuit materials for power electronic applications - issue 2/2017 April, 28 2017
As electronic devices continue to shrink in size as they grow in power, demand grows for power electronic circuits with increased power density...
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High -Tempeature TIMs for power modules and devices - issue 2/2017 April, 28 2017
The proliferation of the usage of power modules has driven the industry to push for higher and more demanding modules. this increase in performance is typically accompanied by higher power densities...
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Fast heat distribution simulation and visualization - issue 2/2017 April, 28 2017
A commonly used simulation method for heat distribution within the power module is the 3D FEM analysis.....
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High-Voltage SiC Power Modules for 10-25KV Applications - issue 1/2016 March, 20 2016
The development of power electronic devices with higher operating voltages (6.% kV+) has enabled more power to be transmitted for a given current and reduced the number of switches required to reach those voltage levels in multi-level converters...
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Novel Low Inductive Phase-Leg IGBT Module Eases Paralleling - 4/2015 July, 15 2015
ABB has introduced the LinPak, a new open standard phase-leg type IGBT power module with a rating of 1700V and 2 x 1000A and a footprint of 100mm x 140mm. this type of module will set a new standard in power density...
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Gallium nitride Transistors drive automotive applications - issue 3/2015 June, 11 2015
Enhancement-mode gallium nitride transistors have been in production for over 5 years. As the technology has matured it has been adopted into a number of automotive applications such as cockpit wireless charging, LiDAR sensing....
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GaN FET Module performance advantage over silicon - issue 3/2015 June, 04 2015
Gallium Nitride (GaN) FETs are increasingly finding use as next generation, high-power devices for power electronics systems.....
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Through system thinking designing reliable high-power IGBT modules - issue 2/2015 March, 11 2015
Infineon has a long history of setting international standards for IGBT modules. System thinking is one of the biggest drivers in search for new technologies...
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Power Modules to the Rescue - issue 8/2014 December, 15 2014
There are an increasing number of suppliers offering power modules due to improvement in technology on many fronts.....
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Fine tuning of digital control in POL regulators optimize dynamic response and minimize component count - issue 1/2014 February, 10 2014
Power system design encompasses many requirements and criteria. This article is about perhaps the most basic of all requirements - a stable voltage supply of the operating circuitry...
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Optimized Design for vibration resistant power module package - issue 8/2013 December, 24 2013
IGBT based power modules designed for typical industrial applications cannot be transferred to commercial, agriculture and construction vehicles (CAV) applications without changes...
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High Frequency Oscillations due to Driver Coupling - issue 6/2013 October, 02 2013
The coupling between the driver and the power module is usually given too little attention. Yet, many problems can be tracked back to this interface, such as when IGBTs are switched very rapidly, or when desaturation takes place during short circuits...
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Improved HiPak Modules for Power Electronic Applications - issue 5/2013 August, 26 2013
Today, IGBT based power electronics modules are the devices of choice for a vast range of applications from light-rail vehicles, heavy duty multi megawatts locomotives to hundred megawatts HVDC installations...
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Silicon Carbide Boost Power Module Performance - issue 4/2013 June, 20 2013
Silicon Carbide offers new approaches for the design of power semiconductors. In conventional power Silicon technology, IGBTs are used as switches for voltages higher than 600V and Silicon PIN freewheeling diodes are state of the art....
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Considerations for developing custom power module solutions - issue 2/2013 April, 02 2013
In the last years the power module market demand changed quickly due to the stringent power design constraints of cost saving and efficiency increase. R&D engineers are working for innovative solutions where high integration level and latest chip technologies are the driving factors in the design phase...
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Sugar-Coated Power Cycling Lifetime - issue 7/2012 November, 30 2012
Power cycling is an important method to characterise the lifetime of power semiconductor modules. application engineers use lifetime curves published by manufacturers to verify that their system design meets the required reliability.....
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Hybrid SiC Power Modules with Low Power Loss - issue 6/2012 October, 10 2012
Mitsubishi Electric has developed a 1.7V hybrid power module consisting of 6th generation Si-IGBT and SiC schottky Barrier Diode (SBD). Adopting SiC-SBD enables a significant power loss reduction during the diode turn-off and IGBT turn-on.
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Asymetrical Parasitic Inductance Utilsed for switching loss reduction - 5/2012 September, 25 2012
High efficiency of power conversion circuits is a design goal on its own. the reduction of switching losses is the basis for higher switching frequencies which lead to a reduction of the size and weight of the passive components...5/2012
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Extension of Operation Temperature Range to 200ºC Enabled by Al/Cu Wire Bonds 4/2012 July, 12 2012
Device manufacturers have announced the extension of the maximum junction temperature to 200ºC in the next generation of IGBTs. However, this extended temperature range can only be utilized when accompanied by a significant enhancement of the package reliability. Al-clad Cu wire bonds together with Ag sinter technology have the potential to achieve this goal.
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IGBT Press-Packs for the Industrial Market - issue 7/2011 January, 26 2012
The standard Press-pack IGBT (PPI) basically uses the same packaging concept as Bipolar high power semiconductor devices. The main difference is that the high power semiconductor content in the package is sqaure IGBT chips arranged on a round molybdenum disc instead of large, round bipolar devices matched in size to the molybdenum disc and ceramic housing.
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A 6in 1 IGBT Module Performance Evaluation Platform - issue 8/2011 January, 26 2012
Achieving good loss performance by high switching speed at low gate resistance is trading-off with the system's EMI behaviour. An evaluation platform has been developed to characterize 6in 1 IGBT modules and to determine their dv/dt versus turn-on loss as function of the gate resistance. A chart indicating the trade-off between turn-on switching loss versus dv/dt parameterized as a function of the sum of internal and external gate resistance of a 150A/1200V 6in 1 IGBT module will be presented.
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Reliable and cost effective solution without baseplate - issue 6/2011 October, 01 2011
Power modules are used for a wide range of different applications. For some applications the power density, the efficiency or the price is one of the key factors....
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Counting methods for limetime calculation of power modules - issue 6/2011 October, 01 2011
Various counting methods are applied to extract amplitude and number of thermal cycles from a mission profile....
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Power Electronics packaging revolution without bond wires, solder and thermal paste - issue 5/2011 August, 20 2011
Power module packaging is driven by the ever increasing demand for higher power densities, reliability improvments and further cost reductions. The known reliability limitations of traditional solder joints and bond wires are holding back significant power density increases......
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EconoPACK+ D-Series with Enhanced characteristics - issue 5/2011 August, 19 2011
The EconPACKTM+ is an innovative IGBT power module concept for very compact and high efficiency inverter designs with power ratings higher than 100KW. This power module concept was developed first by Infineon at the end of the 90s.....
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Fast switching 1200V normally-off SiC VJFET power modules - issue 8/2010 December, 20 2010
An all SiC based power module for use in high frequency and high efficiency applications has been developed. Using parallel combinations of 1200V enhancement mode SiC VJFETs and Schottkydiodes, a total on-resistance of only 10m OHM was achieved at 100A drain current in a commercially available standard module configured as a half-bridge circuit....
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Power module with additional low inductive current path - issue 7/2010 November, 17 2010
Parasitic inductances are a major problem with power modules, inparticular in fast switching applications. The parasitic inductance of the component inteconnections causes an over-voltage condition and increases the swith-off losses in the semiconductor......
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Wide Temperature Operating range of high isolation HV-IGBT modules November, 16 2010
Mitsubishi Electric has developed new high range insulated gate bipolar transistor (HV-IGBT) modules called the 'R-Series' with a high isolation package, which can beused with a wide operating temperature range from -50 degrees C up to 150 degrees C.....
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Next Generation High Peformance BIGT HiPaK Modules - issue 5/2010 September, 01 2010
The practical realization of the Bimode Insulated Gate Transistor (BIGT) will provide a potential solution for furutre high voltage applications demanding compact systems with hgher power levels. In this article, we give an outlook into the new technology and the basic performance levels which could be acchieved as the BIGT progresses towards the product develoment stage....
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Power Modules for Motor Control Applications - issue 5/2010 September, 01 2010
For applications in power electronics where significant power needs to be handled in confined spaces, often the choice for packaging is not a set of discrete power components, but a dedicated power module. For that purpose CoolPAK realises an insert-molded shell which has an integrated metal lead-frame array. These lead-frames also present horizontal areas for housing bare die components as well as forming out the terminals for the outside contacts...
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High Voltage Phase-leg modules for medium voltage drives and inverters May, 18 2010
Medium voltage inverters (line voltages of 1000-3300V) or auxilliary inverters for rail applications at rather low power levels of 100 to 1000 kW suffered by the lack of availability of suitable high voltage IGBT modules rated at lower current. Thus inverter manufacturers had to use odules with too high current ratings which yielded in bulky inverter designs.....
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Thermal behavious of three level trench gate IGBT modules in PFC and PV operation - issue 1/2010 March, 25 2010
The control of the power semiconductors in a three-level NPC topology employs a set of 12 control signals in total. A back-to-back teo level/three level inverter has been built to circulate power performing arbitrary load conditions to analyse the thermal dissipation of the power semiconductors....
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Comprehensive testing with combination testers December, 14 2009
Increasing qulaity demands requiring 100% testing of semiconductors. Static tests are no longer enough. Only supplemental dynamic testing procdures such as swithcing unclamped inductive load and a double impulse test can meet the requirements. Inspection of thermal impedance is very important in the process. The simplest approach uses a test system that can perform all these tests. ISSUE 8/2009
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Advantages of Advanced Active Clamping December, 14 2009
Power Semiconductor manufacturers are offering IGBT modules with ever greater power densities. The limit is represented by the maximum power loss that can be dissipated; optimisation criteria are the packaging technology as well as the conduction and switching losses of the semicoductor chips. ISSUE 8/2009
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Parameter Sensing in Power Electronic Modules October, 19 2009
Modern inverter applications and electrical drive control algorithms depend on accurate measurements regarding key parameters. For the application and the inverter two parameters are of special interest. The line current driving the application and the power module’s temperature provide the necessary information on the state of operation. New power modules like Infineon’s MIPAQ family integrate proper sensors, as well as adapted electronics, to provide highly accurate readings and ease the desig
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Efficiency Improvement with Silicon Carbide Based Power Modules September, 15 2009
Whereas SiC switches have the overall lowest dynamic losses, they show higher static losses due to the lack of conductivity modulation and the necessary chip size limitations due to the still high SiC base material price.
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Sinter Technology for Power Modules May, 01 2009
High-power applications such as automotive, wind, solar and standard industrial drives require power modules which fulfil the demand for high reliability, thermal and electrical ruggedness.
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Investigations on Ageing of IGBTs Under Repetitive Short-Circuit Operations May, 19 2008
Power Modules - Investigations on Ageing of IGBTs Under Repetitive Short-Circuit Operations. Issue 5 2008
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Power Cycling Induced Failure Mechanisms in High Temperature Applications April, 15 2008
Power Module Reliability - Power Cycling Induced Failure Mechanisms in High Temperature Applications. Issue 4 2008
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Paralleling of IGBTs and Diodes of One Power Module April, 10 2008
Power Module Paralleling - Paralleling of IGBTs and Diodes of One Power Module - Pushes Power Capability. Issue 4 2008
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Power Device Technologies for Sustainable Growth of Power Conversion Applications April, 02 2008
Power Modules - Power Device Technologies for Sustainable Growth of Power Conversion Applications. Issue 4 2008
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New Intelligent Power Module Series. February, 29 2008
Power Modules - New Intelligent Power Module Series. Issue 2 2008
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Passive Components January, 22 2008
Passive Components-Application Based Resistor Selection Criteria Issue 1 2008
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Low EMI Techniques for New Generation IGBT Modules January, 14 2008
Power modules - Low EMI Techniques for New Generation IGBT Modules Issue 1 2008
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Hermetic Packaging for Multichip Modules July, 12 2007
Power Modules - Hermetic Packaging for Multichip Modules. Issue 7 2007
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Pressure Sintering for Power Modules. July, 06 2007
Power Modules - Pressure Sintering for Power Modules. Issue 7 2007
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Press FIT for Solderless Assembly of Power Modules May, 18 2007
Power Modules - Press FIT for Solderless Assembly of Power Modules. Issue 5 2007
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Sensor Applications in Power Modules May, 03 2007
Power Modules - Sensor Applications in Power Modules. Issue 5 2007
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New 4500V SPT+ HiPak Modules April, 26 2007
Power Modules - New 4500V SPT+ HiPak Modules. Issue 4 2007
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New 2-Pack IGBT Module with Spring Contacts March, 12 2007
Power Modules - New 2-Pack IGBT Module with Spring Contacts. Issue 3 2007
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Voltage Insulation Power Modules March, 08 2007
Power Modules-High - Voltage Insulation Power Modules - System Design and Qualification. Issue 3 2007
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Advanced Power Modules for Telecom Applications Issue 2 2007 February, 19 2007
Power management - Advanced Power Modules for Telecom Applications Issue 2 2007
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Flexible One-Step Mounting Technology Issue 2/2012
Aiming to cut assembly costs and avert inverter assembly flaws, several companies now offer power modules that can be mounted in a single step. Vincotech taken this notion and developed a novel Press-fit technology and made it available in a wide range of products, including modules with pre-applied phase change material and thermal grease. These power modules also enable low inductance designs.
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With Sinter-Technology Forward to Higher Reliability of Power Modules for Automotive Applications Issue 2/2012
A new kind of applications, the whole automotive market describes more and more a “high end”-power module. The unprecedented combinations of thermal, electrical, and reliability performance with a very small volume and weight are the challenge today. A consistent further development of sinter technology for power modules comprises and answers to all these requirements. Sinter technology substitute all solder connections and also the aluminum bond wires.
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A Technology Platform for Advanced Power Electronic Systems 3/2012
The SKiN technology eliminates the weaknesses of the classical module design and introduces an integrated platform architecture for the design of compact and reliable power electronic systems. Uwe Scheuermann, Product Reliability Manager, SEMIKRON Elektronik, Nuremberg, Germany. The limits in lifetime of classical power modules have been investigated and discussed extensively during the last decades.
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