Features
Power_electronics Features

Power GaN can revolutionise the industrial world - issue 3/2019
Industry 4.0 brings rise to an era of smart factory floors that synergize mass production capabilities with automation, robotics and M2M communication....
More details...
Linear voltage regulators operate at automotive temperatures
Designed for high reliability, high temperature applications, the CMT-Antares is Cissoid's latest regulator.
More details...
Power Semiconductors Features
 
Why and How Isolated Gate drivers - issue 6/2018 November, 06 2018
An IGBT/power MOSFET is a voltage-controlled device, which is used as a switching element in power circuits or motor drives. 'Gate' is the electrically isolated control terminal for each device...
View PDF

SiC Boost Converter with 3D-printed fluid coolers and inductor bobbins - issue 4/2018 August, 20 2018
A highly integrated two-phase interleaved bidirectional boost converter using discrete SiC MOSFETs and 3D-printed fluid coolers as well as 3D-printed inductor bobbins was awarded as the best paper of PCIM 2018....
View PDF

Silicon Carbide Gate Drivers - A disruptive technology in power electronics - issue 3/2018 May, 17 2018
Silicon based power semiconductor switches have traditionally been and still are the primary choice for high-power application designers, who typically make this choice based on voltage and power ratings...
View PDF

New Isolation technology improves reliability and safety - issue 3/2018 May, 17 2018
To ensure safe and reliable operation for industrial and automotive electrical systems, isolation is required between the high voltage, high power elements in a circuit and the low voltage sensing, processing and control elements..
View PDF

An effective approach to controlling of multiple voltage rails - issue 4/2017 August, 29 2017
The process of powering-up the various voltage rails that accompany system-on-chips (SoCs), field programmable gate arrays(FPGAs) and embedded modules in the correct order can be quite convoluted..
View PDF

Air cooled SiC three level inverter reaches efficiency levels above 99 percent - issue 3/2017 June, 30 2017
Power Electronics Europe has sponsored the best paper award of PCIM Europe 2017. At Siemens a dual three-phase 3-level inverter (2 x 27KW; input 600VDC; 2 x 400VAC 45 Arms) has been realised with the latest generation of planar SiC-MOSFETs...
View PDF

Low temperature silver sintering improves reliability of power semiconductors - issue 2/2017 April, 28 2017
Reliability and lifetime of power semiconductors can be improved by using low temperature sintering on silver-containing layers....
View PDF

High Quality 150mm SiC substrates for Power Electronics Applications - issue 4/2016 July, 28 2016
Silicon Carbide (SiC) technology is being more broadly adopted by the power electronic market within applications rated at voltages of 600V or above, whereas silicon-based technology is still preferred for lower class voltage devices....
View PDF

Low Voltage MOSFET's behaviour in FBSOA - issue 4/2016 July, 28 2016
Power MOSFETs working in linear mode need to be correctly designed at the Silicon level in order to improve ruggedness to thermal instability phenomena...
View PDF

GaN Matures for industry with Monolithic Power ICs - May 2016 May, 26 2016
Power GaN has come of age with high performance, high frequency and high reliability. It has taken over 15 years for the material to mature from university curiosity to industry-qualified product....
View PDF

Optimising GaN Performance with integrated driver - May 2016 May, 26 2016
Gallium Nitride (GaN) transistors can switch much faster than Silicon MOSFETs, thus having the potential to achieve lower switching losses. At high slew rates, however, certain package types can limit GaN FET switching performance.
View PDF

Robustness against parasitics by ROI - May 2016 May, 26 2016
Monolithic level shifting gate driver ICs suffer heavily from the negative voltage which can occur at the high side reference pin, when standard IC technologies are used.
View PDF

Cross Switch XS - Silicon and Silicon Carbide Hybrid - issue 6/2015 November, 24 2015
Due to the inherent advantages of wide bandgap (WBG) semiconductor materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN), WBG based power devices are fabricated on much thinner and higher doped n-base regions when compared to Silicon...
View PDF

Efficiency revolution in Auxilliary and Standby Power Supplies - issue 6/2015 November, 24 2015
The new Innoswitch TM-EP family of ICs simplify the development and manufacturing of low-voltage, high-current power supplies, particularly those in compact enclosures or with high efficiency requirements...
View PDF

Progress of GaN Transistors - issue 3/2015 June, 11 2015
Over the last several years, GaN semiconductors have emerged as a leading technology enabler for the next wave of compact, energy-efficient power conversion systems....
View PDF

How 600V GaN Transistors improve power supply efficiency and density - issue 2/2015 March, 11 2015
High performance power supplies today are already very efficient. For at least 2 years , 'titanium' efficiency server power supplies have been announced with greater than 96 per cent overall energy efficiency at half load...
View PDF

SiC and GaN Semiconductors in modules for higher efficiency - issue 2/2015 March, 11 2015
With the increasing availability of new semiconductor materials such as SiC and GaN the opportunity to design higher switching frequency circuits at higher power levels has become possible for power electronics design engineers....
View PDF

Fast Thyristors for Induction Heating Solutions - issue 5/2014 August, 20 2014
Induction heating is one of the key metal applications using high-power resonant converters. the power range of such converters goes up to 10 MW and there is no more efficient alternatives as switching device than the bipolar fast thyristor.

Fast Thyristors for Induction Heating Solutions - issue 5/2014 August, 20 2014
Induction heating is one of the key metal applications using high-power resonant converters. the power range of such converters goes up to 10 MW and there is no more efficient alternatives as switching device than the bipolar fast thyristor.
View PDF

High-Voltage Switcher achieves 5 per cent current regulation accuracy - issue 5/2014 August, 00 2014
In chargers it is often necessary to adjust the output current in addition to the output voltage....
View PDF

GaN - Moving Quickly into entirely new markets - issue 4/2014 June, 18 2014
Gallium Nitride (GaN) based power devices are rapidly being adopted due to their ability to operate at frequencies and speeds beyond the capability of Silicon power devices...
View PDF

A New Gate Driver IC Family that fits all - issue 3/2014 May, 29 2014
Infineon Technologies presents the new EiceDRIVER compact family, a single channel gate driver IC for general purpose. The different variants of the family are intended to support discrete IGBTs, IGBT modules and MOS transistors....
View PDF

Practical use of SiC Power Semiconductors - issue 1/2014 February, 10 2014
Silicon carbide (SiC) power devices are enabling components mainly in the context of higher switching frequencies and/or small footprints in power electronics. However, this trend imposes news challenges on the packaging of the chips....
View PDF

MOSFETs make step change in performance to meet new application requirements - issue 1/2014 February, 10 2014
Low voltage MOSFET devices (less than 40V) are used extensively in the power systems of portable electronic devices, domestic appliances, data communication servers, medical equipment and telecomm infrastructure deployments...
View PDF

GaN Switching for Efficient Converters - issue 5/2013 August, 26 2013
GaN transistor switching speeds of 50V per nanosecond and two orders of magnitude improvement inspecific on-resistance over Silicon devices improve volumetric and conversion efficiency in any power systems and has particular relevance to solar boost coverters....
View PDF

Power GaN Opens New Applications - issue 4/2013 June, 20 2013
Efficient Power Conversion Corportaion (EPC) has been in production with enhancement mode GaN-on-Silicon power transistors for over three years. Much progress has been made improving device performance and reliability...
View PDF

Progress in Silicon-Based 600V Power GaN - issue 4/2013 June, 20 2013
The readiness of 600V GaN-on-Si based power devices fabricated using the GaNpowIR technology platform for large scale production is presented in this article. the advantages of such devices over Silicon incumbent alternatives in several common power application circuits is shown.
View PDF

GaN Transistors for efficient Power Conversion - issue 3/2013 May, 08 2013
For over three decades, power management efficiency and cost showed steady improvement as innovations in power MOSFET structures, technology and circuiot topologies paced the growing need for electrical power on our daily lives....
View PDF

Industrial Grade 25 A Versatile Voltage Regulator - issue 3/2013 May, 08 2013
At APEC International Rectifier introduced the IR3847 high current Point-of-Load(POL) integrated voltage regulator that extends the current rating of IR's third generation SupIRBuck family up to 25A in a compact 5x6 mm package....
View PDF

Power Semiconductors on 300-Millimeter Wafers - issue 3/2013 May, 08 2013
In February 2013 Infineon Technologies released the first products of the CoolMOS family being produced on its new 300-millimeter line at the Villach site in Austria. the production process based on the new technology has completed qualification and is now ready for delivery.....
View PDF

SiC Power Devices and Modules Maturing Rapidly - issue 1/2013 February, 26 2013
The SiC power semiconductor industry has matured to a point which is surprising even industry analysts and leading to significant ($100M in 2010 and expected to eclipse $200M in 2013, $400M in 2015) market penetration according to industry analysts from IMS and Yole....
View PDF

High-Speed TRENCHSTOP 5 IGBT - issue 8/2012 January, 03 2013
IGBTs are historically known for having long tail currents with focus on drive applications and anything switching up to 30kHz was known as 'High Speed', where conduction losses were penalized to get switching losses down....
View PDF

3D-GaN Technology for GaN-on-Silicon - issue 7/2012 November, 30 2012
Today, the technical and electrical advantages of the AlGaN/GaN devices are understood and deployed successfully in RF applications. To make these devices commercially successful for high voltage applications, new aspects need to be considered....
View PDF

Current Handling Capability of 600V GaN High Electron Mobility Transistors - issue 7/2012 November, 30 2012
The development of think, crack-free Gallium Nitride (GaN) epitaxy on standard thickness Silicon (Si) substrates, together with device fabrication in high volume silicon CMOS factories, has opened the potential for highly cost competitive, high voltage GaN devices.
View PDF

Trench Fiels-Stop IGBT3 Turn-Off - issue 6/2012 October, 10 2012
The new Trench-Field-Stop devices show significant differences in control characteristics compared to Power MOSFETs. The reason is the large amount of stored charge, which builds up in the conduction mode....
View PDF

Infrared Determination of Junction Temperature and Switching Losses - issue 6/2012 October, 10 2012
Junction temperature of power MOSFETs is one of the major criteria to obtain temperature derating curves for power converters...
View PDF

Past, Present and Future of HPT-IGCT - issue 5/2012 September, 25 2012
The integrated gate-commuted thyristor (HPT-IGCT) is a state-of-the-art bipolar turn-off device for high power applications. New devices employing this technology have been released during the past few years and in this article we look at the newest memebr in ABb's portfolio....
View PDF

Comparison of 1200V sic Power Switching Devices - 5/2012 September, 25 2012
Silicon Carbide (SiC) power semiconductors being actually commercialised and are promising devices for the future. To outline their charcteristics the swithcing and conducting performance of two types of SiC normally-on JFETs, a SiC normally-off JFET two types of SiC MOSFETs and a SiC BJT have been analyzed by means of measurements at exactly the same boudaries...
View PDF

Static loss Measurement methods for quality improvment - 5/2012 September, 25 2012
Steady increase of power for electric converter units leads to the constant enhancement of characteristics and load capacity of power semiconductors. Thus, requirements to the maximum current laod of power thyristors and diodes, limited by heat-release losses in a semiconductor element and the intensity of heat removal from the die are also increasing...
View PDF

Ultra Low On-Resistance SIC Trench Devices 4/2012 July, 12 2012
A new generation of Silicon Carbide (SiC) planar MOSFETs, trench structure Schottky diodes, and trench MOSFETs has been developed. The planar SiC MOSFET technology suppresses the degradation of the parasitic PN junction diodes even if forward current penetrates into the diodes. The trench Schottky diodes exhibit lower forward voltage than conventional SiC diodes while keeping leakage current at an acceptable level.
View PDF

Silicon Carbide BJT's in Boost Applications 4/2012 July, 12 2012
Efficiency is becoming more and more important as well as size and cost. In boost DC/DC converters, typically used in PV inverters and PFC circuits, increased switching frequency makes a big impact on both size and cost. Silicon Carbide (SiC) bipolar junction transistors (BJT's) offer low-loss high speed switching combined with low conduction losses enabling higher switching frequency and maintaining high efficiency.
View PDF

SiC MOSFETs under High-Frequency Hard Switched Conditions 4/2012 July, 12 2012
Silicon carbide (SiC) MOSFETs enable lower system costs by providing the ability to increase power density and frequency of operation, thereby reducing the size, weight and complexity of the system. the first commercial SiC MOSFET was released by Cree in early 2011 and initial demonstrations of its high frequency capability were presented at PCIM 2011.
View PDF

Wide Bandgap Power Devices in Megawatt Applications 4/2012 July, 12 2012
Although researched for many decades, it is only recently that wide bandgap power devices have strated to achieve an acceptable market entry level in term sof overall performance competitiveness in special applications with relatively lower power ratings. Therefore we will discuss the status of SiC in particular in connection with Megawatt aplpications and we will compare the potential benefits and challenges of introducing SiC technology.
View PDF

Using Trench Power MOSFETs in linear Mode - issue 1/2012 February, 28 2012
If we think about applications for modern Power MOSFETs using trench technology, running them in linear mode may not be top of the priority list....
View PDF

High Voltage Thyristors for Soft Starters - issue 7/2011 January, 26 2012
In spite of significant development of converters on the basis of fully controlled semiconductor stacks (IGBT, GTO, IGCT), today it's still technically legitimate and demandable to use "traditional" high power thyristors in stacks of controlled rectifiers as well as in soft starters for electric motors. Usage of thyristors is especially relevant in case of operating in AC network of 6/10 kV and higher because the devices produced on the basis of such thyristors have no competition.
View PDF

The GaN Opportunity - Higher Performances and New Challenges, issue 6/2011 October, 01 2011
New GaN technology switches offer best in class on-resistance and gate charge, however they need more accurate driving techniques to ensure reliabity and avoid overstresses and failures.....
View PDF

Recent GaN based power device developments - issue 6/2011 October, 01 2011
There is an increasing demand for high power conversion solutions. At the same time, economic political and social pressures are mounting to increase the power delivery efficiency......
View PDF

Gallium Nitride for 600V Operation - issue 4/2011 July, 13 2011
Especially for mains voltage applications, new efficient 600V class devices are required. These devices are within the main product focus of MicroGaN, as outlined at PCIM....
View PDF

High Power IGCT Switches - State-of-the-art and future - issue 3/2011 May, 20 2011
Today, ABB's IGCT (Integrated Gate-Commutated-Thyristors) present the best option for medium voltage drives operating at the highest power levels. Combined with optimum switch-off conditions during operation, the switch offers excellent reliability in demainding conditions
View PDF

Applying Proton Irradiation for performance improvement of Power Semiconductors - issue 3/2011 May, 20 2011
Control of recombination features in the layers of the semiconductor element is consiered to be one of the most effective methods to increase performance and many other characteristics of power semiconductor devices.....
View PDF

Application of Silicon carbide MOSFETs - issue 3/2011 May, 20 2011
The Cree SIC MOSFET has removed the upper voltage limit of silicon MOSFETs. However, there are some differences in characteristics when compared to what is usually expected with high voltage silicon MOSFETs. These differecnes need to be carefully addressed to get maximum benefit from the SiC MOSFET....
View PDF

Fast Switching IGBTs create new challenges - issue 1/2011 May, 04 2011
Fast switching power semiconductors are needed to reduce power losses.A typical system consists of dozens of power semiconductors connected in [arallel that switch several thousands of amperes at DC link voltages in the Kilovolt range....
View PDF

New 650V SJ MOSFET with rugged body diode for hard and soft switching applications - issue 2/2011 May, 04 2011
The new CoolMOS 650V CFD2 technology combines a high blocking voltage of 650V with lowest with lowest on-resistance and low capacitive losses together with an improved body diode ruggedness during reverse recover especially for hard and soft switching applications.......
View PDF

Fast Prototyping of Power Converters by Plug-and-Play Capability of SCALE-2 Driver Cores - issue 8/2010 December, 20 2010
The new 2BB0108T and 2BB0435T basic boards offer an easy, low cost way to evaluate the 2SC0108T and 2SC0435T gate driver cores with different IGBT modules and technologies by providing plug-and-play capability....
View PDF

Third Generation Press-Pack IGBTs and Diodes for Megawatt Applications - issue 6/2010 September, 22 2010
Press-pack IGBT technology has come of age with the application of the latest generation of soft punch through die. Background to the evolution of the new generation and its enhanced characteristics are introduced for the largest member of the product family....
View PDF

IGBT Gate Driver Solutions for Low and Medium Power Applications - issue 6/2010 September, 22 2010
Power electronics systems are commonly used in motor drive, power supply and power conversion applications. They cover a wide output power spectrum: from several hundred watts in small drives up to megawatts in wind power installations or large drive systems....
View PDF

Integrated Gate Driver Circuit Solutions - issue 5/2010 September, 01 2010
Power electronics systems are commonly used in motor drive, power supply and power conversion applications. They cover a wide output spectrum: from several hundred watts in small drives up to megawatts in wind-power installations or large drive systems. Inside the system the gate driver circuit with it's entensive control and monitoring functions form the interface between the microcontroller and the power switches (IGBT)....
View PDF

600/1200V IGBTs set benchmark performance in high switching speed applications May, 18 2010
The third generation of high speed IGBTs from Infineon Technologies (H3) in the voltage class 600V and 1200V are optimsed for high speed switching in welding, UPS, SMPS and solar applications.....
View PDF

Can Gallium Nitride Replace Silicon April, 28 2010
For the past decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market
View PDF

New 1200V SPT+IGBT and Diode for Temperature Applications December, 14 2009
The application spectrum for the 1200V voltage class chips and modules is increasing worldwide due to the constant increase of power electronic systems present in various fields like automotive, industrial, regenerative power sources etc. ISSUE 8/2009
View PDF

Novel 3.5kV Low Loss Rectifier Diode October, 19 2009
IXYS introduces a 600A 3 to 3.5kV diode with a low forward voltage drop, low leakage current and with an extremely high surge current rating. The experimental findings are consistent with numerical modelling results and show that by using Aluminium isolation diffusion, it is possible to get an ideal plane parallel breakdown voltage of 3500V.
View PDF

SiC Device Technologies Predicted Advantages September, 16 2009
SiC has proven to be a good candidate as a material for next generation power semiconductors. To analyse the advantages of SiC based power devices over their silicon counterparts, a high volume and standard application segment such as the 400 to 480VAC line rated motor drives is considered to be ideal.
View PDF

Key Researches on SiC Drive Technologies September, 08 2009
SiC has proven to be a good candidate as a material for next generation power semiconductors. To analyse the advantages of SiC based power devices over their silicon counterparts, a high-volume and standard application segment such as the 400 to 480VAC line rated motor is considered be ideal.
View PDF

Next Generation of Power MOSFETs May, 12 2009
NexFET technology is a new generation of MOSFETs for power applications with its roots in a laterally diffused MOS (LDMOS) device used successfully for RF signal amplifications. The RF heritage provides minimum internal capacitances, and the vertical current flow offers a high-current density without gate de-biasing issues. By using NexFET switches, a converter’s efficiency can be significantly improved.
View PDF

High-Speed GaN Switches for Motor Drives 3/2012
High speed, low loss, 600V GaN switches offer unique advantages to motor drives. Increased bandwidth and improved system efficiency can be realized in a range of applications, from workhorse induction motors to high-performance servos. Jim Honea, Transphorm Inc., Jun Kang, Yaskawa America Inc., USA There are two benefits for motor drives that come with high switching frequency: one obvious, and one not so obvious. The obvious benefit is increased system bandwidth.
View PDF

New SiC Thin-Wafer Technology Paving the Way of Schottky Diodes with Improved Performance and Reliability 3/2012
This article presents the new thinQ!TM 5th Generation (G5) of SiC Schottky diodes from Infineon Technologies. In G5, both the capacitive charge and the forward voltage have been minimized through a new and exclusive production process. The improvements with respect to previous generations are discussed, with the support of direct application tests results. Vladimir Scarpa, Uwe Kirchner, Ronny Kern, and Rolf Gerlach, Infineon Technologies, Villach (Austria) and Neubiberg (Germany)
View PDF

Newsletter sign up

Sponsors